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| NTMS4706N Power MOSFET Features 30 V, 10.3 A, Single N-Channel, SO-8 * * * * * * * * Low RDS(on) Low Gate Charge Standard SO-8 Single Package Pb-Free Package is Available V(BR)DSS http://onsemi.com RDS(ON) TYP 9.0 mW @ 10 V 30 V 11.4 mW @ 4.5 V 10.3 A ID MAX (Note 1) Applications Notebooks, Graphics Cards Synchronous Rectification High Side Switch DC-DC Converters Parameter Symbol VDSS VGS Steady State t v 10 s TA = 25C TA = 85C TA = 25C TA = 25C PD ID Value 30 20 8.6 6.2 10.3 1.5 2.2 TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, Tstg IS EAS ID 6.4 4.6 0.83 31 -55 to 150 2.1 150 W A W Unit V V A MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) N-Channel D G S Power Dissipation (Note 1) Steady State t v 10 s Steady State Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current MARKING DIAGRAM/ PIN ASSIGNMENT 1 1 8 Drain Drain Drain Drain 4706N ALYWG G A C A mJ Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 V, VGS = 10 V, IL Peak = 7.5 A, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) SO-8 CASE 751 STYLE 12 Source Source Source Gate Top View TL 260 C THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Value 83.5 58 150 Unit C/W 4706N = Device Code A = Assembly Location L = WaferLot Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMS4706NR2 NTMS4706NR2G Package SO-8 SO-8 (Pb-Free) Shipping 2500/Tape & Reel 2500/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 1 November, 2005 - Rev. 3 Publication Order Number: NTMS4706N/D NTMS4706N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 21 1.0 50 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VGS = 0 V, VDS = 24 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.0 -4.8 2.5 V mV/C VGS = 10 V, ID = 10.3 A VGS = 4.5 V, ID = 10 A 9.0 11.4 19 12 15 mW Forward Transconductance gFS VDS = 15 V, ID = 10 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W 7.5 4.0 24 14 12 8.0 40 25 ns Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 10 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 950 400 100 10 1.25 2.4 4.5 1.82 W 15 nC pF DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.1 A TJ = 25C TJ = 125C 0.74 0.57 34 VGS = 0 V, dIS/dt = 100 A/ms, IS = 2.1 A 16 18 29 nC ns 1.0 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMS4706N TYPICAL PERFORMANCE CURVES 30 ID, DRAIN CURRENT (AMPS) 25 20 15 10 5 0 0 2.6 V 5V 3.2 V 10 V 3V 2.8 V TJ = 25C ID, DRAIN CURRENT (AMPS) 35 30 25 20 15 10 5 0 1 2 3 4 5 6 7 8 9 10 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = 125C TJ = 25C TJ = -55C 1.5 2 2.5 3 3.5 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4.5 VDS 10 V 2.4 V 2.2 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.03 TJ = 25C ID = 10 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.018 Figure 2. Transfer Characteristics TJ = 25C 0.015 VGS = 4.5 V 0.012 VGS = 10 V 0.009 0.025 0.02 0.015 0.01 0.005 1 7 2 5 3 4 6 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 0.006 2 4 16 14 8 12 6 10 ID, DRAIN CURRENT (AMPS) 18 20 Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 ID = 10.3 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 100C 3 6 9 12 15 18 21 24 27 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTMS4706N TYPICAL PERFORMANCE CURVES VDS = 0 V C, CAPACITANCE (pF) 1500 C iss 1200 Ciss 900 600 Coss 300 Crss 0 20 10 VGS 0 VDS 10 20 30 Crss VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1800 TJ = 25C 5 QT 4 VDS QGS 3 QGD VGS 20 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 16 12 2 8 1 0 0 2 ID = 10 A TJ = 25C 4 6 8 QG, TOTAL GATE CHARGE (nC) 4 0 10 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDD = 10 V ID = 10.3 A VGS = 4.5 V t, TIME (ns) 100 tr 7 6 5 4 3 2 1 Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 10 tf td(off) td(on) 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTMS4706N PACKAGE DIMENSIONS SOIC-8 CASE 751-07 ISSUE AG -X- A 8 5 B 1 4 S 0.25 (0.010) M Y M -Y- G C -Z- H D 0.25 (0.010) M SEATING PLANE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NTMS4706N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTMS4706N/D |
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